August 27, 2008
Fuji Electric Device Technology Co., Ltd.

Fuji Electric Releases New IGBT Module for
High-capacity Industrial Equipment
A new product has been added to the line-up using FDT’s fifth generation IGBT, U4 series

Fuji Electric Device Technology Co., Ltd. (“FDT”) (President: Hisao Shigekane) has announced today that it has successfully developed and will start selling High Power Module, a new product using its fifth generation IGBT, U4 series, in October 2008. High Power Module, which has industry-leading level of thermal-conductivity, low-power loss, and low-noise, support larger current ratings with the package size equivalent to the conventional one. FDT has provided the IGBTs that are mainly used in medium industrial power applications such as medium-capacity inverters and elevators. This new product will allow FDT to extend its IGBT applications to power conversion systems that are used for wind generator systems or high-voltage, high-capacity inverters in the industrial infrastructure field. By expanding its sales reach, FDT will further increase its share of IGBTs in the industrial market.

1.Sales Target

FDT will target achieving 5,000 units of sales per month in 2009 for power conversion systems that are used for wind generator systems or the high-voltage, high-capacity inverters in the industrial infrastructure field, which has seen strong demand.

2.Features of High Power Module

The features described below enable High Power Module to support larger current ratings (1200V/600A-3600A, 1700V/600A-3600A) with the package size equivalent to the conventional one. A large-capacity equipment usually uses multiple semiconductors being connected in parallel so that it can handle large currents. High Power Module, which supports high currents in a single unit, will help equipment manufactures reduce their product size.

In addition, the fifth generation IGBT, U4 series, which is equipped in High Power Module, has less noise generation and a 30% reduced power loss than the conventional one. This has contributed to energy saving along with improved energy conversion efficiency as well as to ease of use.

a) Silicon nitride used as substrate material enables highest level of thermal-conductivity in the industrial applications

Since power semiconductors are generally attached to the equipment cooling fin with being isolated electrically, it is necessary to use a substrate material with both high isolation and thermal-conductivity (high-heat-release performance). The higher the current a power semiconductor can carry, the higher the thermal-conductivity the substrate material requires. High Power Module employs silicon nitride as its substrate material, which has better thermal-conductivity and is less fragile than the conventional substrate material, alumina, enabling itself to support higher current ratings.

b) Suppressing noise while reducing power loss

Trade-off between noise suppression and power loss has been better balanced in the U4 series. Reduced noise generation will contribute to customers’ product design.

c) The fifth generation IGBT, U4 series, which has higher current density, is used to enable it to support larger current ratings,

In the fifth generation IGBT, U4 series, the electrode structure has been changed from planer to trench, which has gate electrodes being embedded vertically into the silicon wafer. This has resulted in an IGBT that has larger surface area in the same volume as that of the conventional one and higher current density.

3.Voltage, Current Rating and Release Date

4.Standard Price

¥50,000 - ¥100,000

5.Customer Inquiries

If you have any questions on this product, please contact:
Power Module Dept.
Semiconductors Business Plan & Administration Div.
Fuji Electric Device Technology Co., Ltd.
TEL：+81-263-26-2513　　FAX：+81-263-28-5531